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TK40S06N1L,LXHQ

TK40S06N1L,LXHQ Toshiba Semiconductor and Storage

TK40S06N1L_datasheet_en_20200624.pdf?did=30110&prodName=TK40S06N1L Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 88.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
auf Bestellung 976 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.47 EUR
13+ 2.03 EUR
100+ 1.58 EUR
500+ 1.34 EUR
Mindestbestellmenge: 11
Produktrezensionen
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Technische Details TK40S06N1L,LXHQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 40A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V, Power Dissipation (Max): 88.2W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 200µA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V.

Weitere Produktangebote TK40S06N1L,LXHQ nach Preis ab 0.98 EUR bis 2.49 EUR

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TK40S06N1L,LXHQ TK40S06N1L,LXHQ Hersteller : Toshiba TK40S06N1L_datasheet_en_20200624-1649704.pdf MOSFET 2W 1MHz Automotive; AEC-Q101
auf Bestellung 2315 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
21+2.49 EUR
26+ 2.04 EUR
100+ 1.59 EUR
500+ 1.35 EUR
1000+ 1.1 EUR
2000+ 1.03 EUR
4000+ 0.98 EUR
Mindestbestellmenge: 21
TK40S06N1L,LXHQ TK40S06N1L,LXHQ Hersteller : Toshiba tk40s06n1l_datasheet_en_20200624.pdf Trans MOSFET N-CH Si 60V 40A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R
Produkt ist nicht verfügbar
TK40S06N1L,LXHQ TK40S06N1L,LXHQ Hersteller : Toshiba Semiconductor and Storage TK40S06N1L_datasheet_en_20200624.pdf?did=30110&prodName=TK40S06N1L Description: MOSFET N-CH 60V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 88.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Produkt ist nicht verfügbar