TK42A12N1,S4X(S Toshiba
| Anzahl | Privatkunde |
|---|---|
| 83+ | 2.68 EUR |
| 100+ | 2.34 EUR |
| 200+ | 1.83 EUR |
| 800+ | 1.61 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
83 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details TK42A12N1,S4X(S Toshiba
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 120V; 42A; 35W; TO220FP, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 120V, Drain current: 42A, Case: TO220FP, Gate-source voltage: ±20V, On-state resistance: 7.8mΩ, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Gate charge: 52nC, Power dissipation: 35W.
Weitere Produktangebote TK42A12N1,S4X(S
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
TK42A12N1,S4X(S | TOSHIBA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 120V; 42A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 42A Case: TO220FP Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 52nC Power dissipation: 35W |
auf Bestellung 647 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TK42A12N1,S4X(S |
|
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 42A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 42A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Power dissipation: 35W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 42A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 42A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Power dissipation: 35W
auf Bestellung 647 Stücke:
Lieferzeit 14-21 Tag (e)