| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.53 EUR |
| 10+ | 18.05 EUR |
| 120+ | 15.85 EUR |
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Technische Details TK49N65W,S1F Toshiba
Description: PB-F POWER MOSFET TRANSISTOR TO2, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 3.5V @ 2.5mA, Power Dissipation (Max): 400W (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 24.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote TK49N65W,S1F
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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TK49N65W,S1F | Toshiba Semiconductor and Storage |
 Description: PB-F POWER MOSFET TRANSISTOR TO2Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 3.5V @ 2.5mA Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 24.6A, 10V Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
TK49N65W,S1F | Toshiba |
Trans MOSFET N-CH Si 650V 49.2A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TK49N65W,S1F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO2
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 2.5mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 24.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: PB-F POWER MOSFET TRANSISTOR TO2
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 2.5mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 24.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TK49N65W,S1F |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 650V 49.2A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH Si 650V 49.2A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH