Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TK4A50D(STA4,Q,M)

TK4A50D(STA4,Q,M) Toshiba Semiconductor and Storage

Name: TK4A50D(STA4,Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: 2768866-3
Price: 0.86 EUR
Availability: InStock

Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 4A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V

auf Bestellung 111 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis ohne MwSt
13+	1.43 EUR
50+	1.19 EUR
100+	0.86 EUR

Mindestbestellmenge: 13

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Technische Details TK4A50D(STA4,Q,M) Toshiba Semiconductor and Storage

Description: MOSFET N-CH 500V 4A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 1mA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V.