| Anzahl | Preis |
|---|---|
| 2+ | 2.73 EUR |
| 50+ | 1.83 EUR |
| 100+ | 1.48 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.93 EUR |
| 5000+ | 0.91 EUR |
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Technische Details TK4A80E,S4X Toshiba
Description: PB-FPOWERMOSFETTRANSISTORTO-220S, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 4V @ 400µA, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote TK4A80E,S4X nach Preis ab 1.62 EUR bis 1.97 EUR
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| TK4A80E,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: PB-FPOWERMOSFETTRANSISTORTO-220SInput Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 4V @ 400µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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