TK4R3A06PL,S4X Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 68A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 68A (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 4.5V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V.