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Technische Details TK4R9E15Q5,S1X Toshiba
Description: 150V UMOS10-HSD TO-220 4.9MOHM, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 2.2mA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 75 V.
Weitere Produktangebote TK4R9E15Q5,S1X nach Preis ab 5.4 EUR bis 7.75 EUR
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TK4R9E15Q5,S1X | Toshiba |
 Silicon N-channel MOSFET |
auf Bestellung 380 Stücke: Lieferzeit 14-21 Tag (e) |
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TK4R9E15Q5,S1X | Toshiba Semiconductor and Storage |
Description: 150V UMOS10-HSD TO-220 4.9MOHM Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.2mA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 75 V |
auf Bestellung 132 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK4R9E15Q5,S1X |
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Hersteller: Toshiba
Silicon N-channel MOSFET
Silicon N-channel MOSFET
auf Bestellung 380 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 5.4 EUR |
| TK4R9E15Q5,S1X |
|
Hersteller: Toshiba Semiconductor and Storage
Description: 150V UMOS10-HSD TO-220 4.9MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.2mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 75 V
Description: 150V UMOS10-HSD TO-220 4.9MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.2mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 75 V
auf Bestellung 132 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.75 EUR |
| 50+ | 6.13 EUR |
| 100+ | 6.01 EUR |