TK55S10N1,LXHQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 100V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 1 EUR |
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Technische Details TK55S10N1,LXHQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 55A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Ta), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V, Power Dissipation (Max): 157W (Tc), Vgs(th) (Max) @ Id: 4V @ 500µA, Supplier Device Package: DPAK+, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote TK55S10N1,LXHQ nach Preis ab 1.09 EUR bis 3.2 EUR
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TK55S10N1,LXHQ | Hersteller : Toshiba |
MOSFETs 157W 1MHz Automotive; AEC-Q101 |
auf Bestellung 6840 Stücke: Lieferzeit 10-14 Tag (e) |
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TK55S10N1,LXHQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 55A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V Power Dissipation (Max): 157W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: DPAK+ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 8742 Stücke: Lieferzeit 10-14 Tag (e) |
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