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TK560P60Y,RQ

TK560P60Y,RQ Toshiba Semiconductor and Storage

TK560P60Y_datasheet_en_20161214.pdf?did=55406&prodName=TK560P60Y
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 600V 7A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.89 EUR
4000+0.83 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TK560P60Y,RQ Toshiba Semiconductor and Storage

Description: MOSFET N-CHANNEL 600V 7A DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 240µA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V.

Weitere Produktangebote TK560P60Y,RQ nach Preis ab 0.92 EUR bis 3.06 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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TK560P60Y,RQ TK560P60Y,RQ Hersteller : Toshiba TK560P60Y_datasheet_en_20161214-1115878.pdf MOSFETs N-Ch DTMOSV 600V 60W 380pF 7.0A
auf Bestellung 3605 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.01 EUR
10+1.47 EUR
25+1.46 EUR
100+1.11 EUR
500+0.98 EUR
1000+0.95 EUR
2000+0.92 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TK560P60Y,RQ TK560P60Y,RQ Hersteller : Toshiba Semiconductor and Storage TK560P60Y_datasheet_en_20161214.pdf?did=55406&prodName=TK560P60Y Description: MOSFET N-CHANNEL 600V 7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
auf Bestellung 5557 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.06 EUR
10+1.95 EUR
100+1.32 EUR
500+1.05 EUR
1000+0.96 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH