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Technische Details TK58E06N1 Toshiba
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 58A; 110W; TO220AB, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 58A, Power dissipation: 110W, Case: TO220AB, Gate-source voltage: ±20V, On-state resistance: 4.4mΩ, Mounting: THT, Gate charge: 46nC, Kind of package: tube, Kind of channel: enhancement.
Weitere Produktangebote TK58E06N1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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TK58E06N1,S1X | TOSHIBA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 58A; 110W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 58A Power dissipation: 110W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TK58E06N1,S1X |
|
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 58A; 110W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 58A; 110W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH