auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.29 EUR |
| 10+ | 2.75 EUR |
| 50+ | 2.43 EUR |
| 100+ | 2.06 EUR |
| 250+ | 2.02 EUR |
| 2500+ | 1.99 EUR |
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Technische Details TK5A60W,S4VX Toshiba
Description: MOSFET N-CH 600V 5.4A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), Rds On (Max) @ Id, Vgs: 900mOhm @ 2.7A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 270µA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V.
Weitere Produktangebote TK5A60W,S4VX
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TK5A60W,S4VX | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 600V 5.4A 3-Pin(3+Tab) TO-220SIS Magazine |
Produkt ist nicht verfügbar |
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TK5A60W,S4VX | Hersteller : Toshiba |
Trans MOSFET N-CH Si 600V 5.4A 3-Pin(3+Tab) TO-220SIS Magazine |
Produkt ist nicht verfügbar |
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TK5A60W,S4VX | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 5.4A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.7A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 270µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V |
Produkt ist nicht verfügbar |