TK5A60W5,S5VX Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Vgs(th) (Max) @ Id: 4.5V @ 230µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
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Technische Details TK5A60W5,S5VX Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-, Vgs(th) (Max) @ Id: 4.5V @ 230µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220SIS.
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TK5A60W5,S5VX | Hersteller : Toshiba |
 MOSFETs Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=30W F=1MHZ |
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