TK60F10N1L,LXGQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 60A TO220SM
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220SM(W)
| Anzahl | Preis |
|---|---|
| 1000+ | 1.63 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK60F10N1L,LXGQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 60A TO220SM, Vgs(th) (Max) @ Id: 3.5V @ 500µA, Power Dissipation (Max): 205W (Tc), Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: TO-220SM(W).
Weitere Produktangebote TK60F10N1L,LXGQ nach Preis ab 1.48 EUR bis 4.84 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK60F10N1L,LXGQ | Hersteller : Toshiba |
MOSFETs PD=205W F=1MHZ AEC-Q101 |
auf Bestellung 1985 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
TK60F10N1L,LXGQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 60A TO220SM Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: TO-220SM(W) Vgs(th) (Max) @ Id: 3.5V @ 500µA Power Dissipation (Max): 205W (Tc) Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V |
auf Bestellung 1750 Stücke: Lieferzeit 10-14 Tag (e) |
|