Produkte > TOSHIBA > TK62N60X,S1F(S
TK62N60X,S1F(S

TK62N60X,S1F(S TOSHIBA

TK62N60X.pdf
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; Idm: 247A; 400W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Pulsed drain current: 247A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhancement
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Technische Details TK62N60X,S1F(S TOSHIBA

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; Idm: 247A; 400W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 61.8A, Pulsed drain current: 247A, Power dissipation: 400W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 33mΩ, Mounting: THT, Gate charge: 135nC, Kind of package: tube, Kind of channel: enhancement.