TK65S04N1L,LQ(O Toshiba

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 107W; DPAK; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 65A, Power dissipation: 107W, Case: DPAK, Gate-source voltage: ±20V, On-state resistance: 7.8mΩ, Mounting: SMD, Gate charge: 39nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.