TK6A60W,S4VX Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 600V 6.2A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 310µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 3.47 EUR |
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Technische Details TK6A60W,S4VX Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 6.2A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Rds On (Max) @ Id, Vgs: 750mOhm @ 3.1A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 310µA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V.
Weitere Produktangebote TK6A60W,S4VX nach Preis ab 2.33 EUR bis 4.81 EUR
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TK6A60W,S4VX | Hersteller : Toshiba |
MOSFET N-Ch 6.2A 30W FET 600V 390pF 12nC |
auf Bestellung 161 Stücke: Lieferzeit 14-28 Tag (e) |
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TK6A60W,S4VX | Hersteller : Toshiba |
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auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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TK6A60W,S4VX | Hersteller : Toshiba |
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TK6A60W,S4VX | Hersteller : Toshiba |
Trans MOSFET N-CH Si 600V 6.2A 3-Pin(3+Tab) TO-220SIS Magazine |
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