TK6R8A08QM,S4X Toshiba Semiconductor and Storage

Description: UMOS10 TO-220SIS 80V 6.8MOHM, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 3.5V @ 500µA, Power Dissipation (Max): 41W (Tc), Rds On (Max) @ Id, Vgs: 6.8mOhm @ 29A, 10V, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.