TK6R8A08QM,S4X Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220SIS 80V 6.8MOHM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 29A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.32 EUR |
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Mindestmenge:
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Technische Details TK6R8A08QM,S4X Toshiba Semiconductor and Storage
Description: UMOS10 TO-220SIS 80V 6.8MOHM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 6.8mOhm @ 29A, 10V, Power Dissipation (Max): 41W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 500µA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V.
Weitere Produktangebote TK6R8A08QM,S4X nach Preis ab 1.55 EUR bis 3.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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TK6R8A08QM,S4X | Toshiba |
MOSFETs UMOS10 TO-220SIS 80V 6.8mohm |
auf Bestellung 378 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK6R8A08QM,S4X |
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Hersteller: Toshiba
MOSFETs UMOS10 TO-220SIS 80V 6.8mohm
MOSFETs UMOS10 TO-220SIS 80V 6.8mohm
auf Bestellung 378 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.8 EUR |
| 10+ | 1.82 EUR |
| 100+ | 1.8 EUR |
| 500+ | 1.55 EUR |