auf Bestellung 150 Stücke:
Lieferzeit 140-144 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.35 EUR |
| 10+ | 4.10 EUR |
| 25+ | 3.94 EUR |
| 50+ | 2.29 EUR |
| 100+ | 2.06 EUR |
| 250+ | 1.94 EUR |
| 500+ | 1.65 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK72A08N1,S4X Toshiba
Description: MOSFET N-CH 75V 80A TO220SIS, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8200 pF @ 10 V.
Weitere Produktangebote TK72A08N1,S4X nach Preis ab 5.67 EUR bis 5.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
TK72A08N1,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 75V 80A TO220SISPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8200 pF @ 10 V |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
|