TK7J90E,S1E(S Toshiba

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 200W; TO3PN, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 900V, Drain current: 7A, Pulsed drain current: 21A, Power dissipation: 200W, Case: TO3PN, Gate-source voltage: ±30V, On-state resistance: 2Ω, Mounting: THT, Gate charge: 32nC, Kind of package: tube, Kind of channel: enhancement.