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TK7S10N1Z,LXHQ

TK7S10N1Z,LXHQ Toshiba Semiconductor and Storage

TK7S10N1Z_datasheet_en_20200624.pdf?did=15153&prodName=TK7S10N1Z Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.58 EUR
Mindestbestellmenge: 2000
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Technische Details TK7S10N1Z,LXHQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 100V 7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V.

Weitere Produktangebote TK7S10N1Z,LXHQ nach Preis ab 0.61 EUR bis 2.08 EUR

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TK7S10N1Z,LXHQ TK7S10N1Z,LXHQ Hersteller : Toshiba Semiconductor and Storage TK7S10N1Z_datasheet_en_20200624.pdf?did=15153&prodName=TK7S10N1Z Description: MOSFET N-CH 100V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
auf Bestellung 2955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.39 EUR
16+ 1.14 EUR
100+ 0.89 EUR
500+ 0.75 EUR
1000+ 0.61 EUR
Mindestbestellmenge: 13
TK7S10N1Z,LXHQ TK7S10N1Z,LXHQ Hersteller : Toshiba TK7S10N1Z_datasheet_en_20200624-1915289.pdf MOSFET PD=50W F=1MHZ AEC-Q101
auf Bestellung 2066 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
25+2.08 EUR
31+ 1.7 EUR
100+ 1.32 EUR
500+ 1.12 EUR
1000+ 0.92 EUR
2000+ 0.86 EUR
4000+ 0.82 EUR
Mindestbestellmenge: 25