TK9J90E,S1E(S TOSHIBA

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 900V; 9A; 250W; TO3PN, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 900V, Drain current: 9A, Power dissipation: 250W, Case: TO3PN, Gate-source voltage: ±30V, On-state resistance: 1.3Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Gate charge: 46nC.