Technische Details TN0200K-T1-E3 VISHAY
Description: MOSFET N-CH 20V SOT23-3, Packaging: Cut Tape (CT), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 730mA (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 50µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Obsolete, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V.
Weitere Produktangebote TN0200K-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| TN0200K-T1-E3 | Vishay |
 N-кан. MOSFET 20V, 0.65/0.73A, 0.22Вт@75C, SOT-23 LEADFREE Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
TN0200K-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 20V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 730mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 50µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TN0200K-T1-E3 |
|
Hersteller: Vishay
N-кан. MOSFET 20V, 0.65/0.73A, 0.22Вт@75C, SOT-23 LEADFREE Транзистори
N-кан. MOSFET 20V, 0.65/0.73A, 0.22Вт@75C, SOT-23 LEADFREE Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TN0200K-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 730mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 50µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Description: MOSFET N-CH 20V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 730mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 50µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH