Technische Details TN0200K-T1-E3 VISHAY
Description: MOSFET N-CH 20V SOT23-3, Packaging: Cut Tape (CT), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 730mA (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 50µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Obsolete, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V.
Weitere Produktangebote TN0200K-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| TN0200K-T1-E3 | Hersteller : VISHAY |
 SOT23 |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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TN0200K-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 0.73A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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TN0200K-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 730mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 50µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V |
Produkt ist nicht verfügbar |