TN0610N3-G Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 96+ | 1.87 EUR |
| 104+ | 1.67 EUR |
| 500+ | 1.57 EUR |
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Technische Details TN0610N3-G Microchip Technology
Description: MOSFET N-CH 100V 500MA TO92-3, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Tj), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V.
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TN0610N3-G | Microchip Technology |
 Trans MOSFET N-CH Si 100V 0.5A 3-Pin TO-92 Bag |
auf Bestellung 2708 Stücke: Lieferzeit 14-21 Tag (e) |
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TN0610N3-G | Microchip Technology |
MOSFETs 100V 1.5Ohm |
auf Bestellung 1087 Stücke: Lieferzeit 10-14 Tag (e) |
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TN0610N3-G | Microchip Technology |
Trans MOSFET N-CH Si 100V 0.5A 3-Pin TO-92 Bag |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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TN0610N3-G | Microchip Technology |
Description: MOSFET N-CH 100V 500MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Tj) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
auf Bestellung 1657 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TN0610N3-G |
|
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 100V 0.5A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 100V 0.5A 3-Pin TO-92 Bag
auf Bestellung 2708 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 96+ | 1.87 EUR |
| 104+ | 1.7 EUR |
| 500+ | 1.63 EUR |
| TN0610N3-G |
|
Hersteller: Microchip Technology
MOSFETs 100V 1.5Ohm
MOSFETs 100V 1.5Ohm
auf Bestellung 1087 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.31 EUR |
| 25+ | 1.92 EUR |
| 100+ | 1.76 EUR |
| TN0610N3-G |
|
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 100V 0.5A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 100V 0.5A 3-Pin TO-92 Bag
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 74+ | 2.43 EUR |
| 250+ | 2.21 EUR |
| 500+ | 2.14 EUR |
| 1000+ | 2.08 EUR |
| TN0610N3-G |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 500MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Description: MOSFET N-CH 100V 500MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 1657 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.56 EUR |
| 25+ | 2.12 EUR |
| 100+ | 1.95 EUR |