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Technische Details TN0610N3-G Microchip Technology
Description: MOSFET N-CH 100V 500MA TO92-3, Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 1W (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V, Current - Continuous Drain (Id) @ 25°C: 500mA (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bag, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V.
Weitere Produktangebote TN0610N3-G nach Preis ab 1.64 EUR bis 2.15 EUR
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TN0610N3-G | Microchip Technology |
 Description: MOSFET N-CH 100V 500MA TO92-3Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bag Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V |
auf Bestellung 1657 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 500MA TO92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bag
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Description: MOSFET N-CH 100V 500MA TO92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bag
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
auf Bestellung 1657 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.15 EUR |
| 25+ | 1.78 EUR |
| 100+ | 1.64 EUR |