TN0620N3-G-P002 Microchip Technology
auf Bestellung 1994 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 129+ | 1.08 EUR |
| 135+ | 1 EUR |
| 140+ | 0.92 EUR |
| 250+ | 0.88 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.74 EUR |
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Technische Details TN0620N3-G-P002 Microchip Technology
Description: MOSFET N-CH 200V 250MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Tj), Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V.
Weitere Produktangebote TN0620N3-G-P002 nach Preis ab 0.74 EUR bis 2.71 EUR
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TN0620N3-G-P002 | Hersteller : Microchip Technology |
 Trans MOSFET N-CH Si 200V 0.25A 3-Pin TO-92 T/R |
auf Bestellung 1994 Stücke: Lieferzeit 14-21 Tag (e) |
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TN0620N3-G-P002 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 200V 250MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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TN0620N3-G-P002 | Hersteller : Microchip Technology |
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auf Bestellung 12726 Stücke: Lieferzeit 10-14 Tag (e) |
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TN0620N3-G-P002 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 200V 250MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
auf Bestellung 4321 Stücke: Lieferzeit 10-14 Tag (e) |
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TN0620N3-G-P002 | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 200V 0.25A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
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TN0620N3-G-P002 | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 200V 0.25A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
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 |
TN0620N3-G-P002 | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 200V 0.25A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
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| TN0620N3-G-P002 | Hersteller : MICROCHIP TECHNOLOGY |
TN0620N3-G-P002 THT N channel transistors |
Produkt ist nicht verfügbar |