TN2404K-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 240V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.53 EUR |
| 6000+ | 0.49 EUR |
| 9000+ | 0.47 EUR |
| 15000+ | 0.45 EUR |
| 21000+ | 0.44 EUR |
| 30000+ | 0.43 EUR |
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Technische Details TN2404K-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 240V 200MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 240 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V.
Weitere Produktangebote TN2404K-T1-E3 nach Preis ab 0.49 EUR bis 2.08 EUR
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TN2404K-T1-E3 | Vishay Semiconductors |
MOSFETs 240V 0.2A 4.0Ohm |
auf Bestellung 61711 Stücke: Lieferzeit 10-14 Tag (e) |
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TN2404K-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 240V; 0.16A; 0.23W Kind of channel: enhancement Mounting: SMD Case: SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Technology: TrenchFET® Polarisation: unipolar Gate charge: 4.87nC Drain current: 0.16A Power dissipation: 0.23W On-state resistance: 4Ω Gate-source voltage: ±20V Drain-source voltage: 240V |
auf Bestellung 672 Stücke: Lieferzeit 14-21 Tag (e) |
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TN2404K-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 240V 200MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V |
auf Bestellung 33162 Stücke: Lieferzeit 10-14 Tag (e) |
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| TN2404K-T1-E3 |
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Hersteller: Vishay Semiconductors
MOSFETs 240V 0.2A 4.0Ohm
MOSFETs 240V 0.2A 4.0Ohm
auf Bestellung 61711 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 0.73 EUR |
| 10+ | 0.72 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.58 EUR |
| 3000+ | 0.5 EUR |
| 6000+ | 0.49 EUR |
| TN2404K-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 240V; 0.16A; 0.23W
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 4.87nC
Drain current: 0.16A
Power dissipation: 0.23W
On-state resistance: 4Ω
Gate-source voltage: ±20V
Drain-source voltage: 240V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 240V; 0.16A; 0.23W
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 4.87nC
Drain current: 0.16A
Power dissipation: 0.23W
On-state resistance: 4Ω
Gate-source voltage: ±20V
Drain-source voltage: 240V
auf Bestellung 672 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.23 EUR |
| 85+ | 0.84 EUR |
| 125+ | 0.57 EUR |
| 250+ | 0.56 EUR |
| TN2404K-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 240V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Description: MOSFET N-CH 240V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
auf Bestellung 33162 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.08 EUR |
| 14+ | 1.3 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.61 EUR |