TN2524N8-G

TN2524N8-G Microchip Technology


TN2524-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005952A.pdf Hersteller: Microchip Technology
Description: MOSFET N-CH 240V 360MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 2000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+1.87 EUR
Mindestbestellmenge: 2000
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Produktbewertung abgeben

Technische Details TN2524N8-G Microchip Technology

Description: MOSFET N-CH 240V 360MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360mA (Tj), Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V, Power Dissipation (Max): 1.6W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-243AA (SOT-89), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 240 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V.

Weitere Produktangebote TN2524N8-G nach Preis ab 1.52 EUR bis 3.72 EUR

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TN2524N8-G TN2524N8-G Hersteller : MICROCHIP TECHNOLOGY tn2524.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 1A; 1.6W; SOT89-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Pulsed drain current: 1A
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
33+2.23 EUR
36+ 2.03 EUR
45+ 1.6 EUR
48+ 1.52 EUR
Mindestbestellmenge: 33
TN2524N8-G TN2524N8-G Hersteller : MICROCHIP TECHNOLOGY tn2524.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 1A; 1.6W; SOT89-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Pulsed drain current: 1A
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
33+2.23 EUR
36+ 2.03 EUR
45+ 1.6 EUR
48+ 1.52 EUR
Mindestbestellmenge: 33
TN2524N8-G TN2524N8-G Hersteller : Microchip Technology TN2524-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005952A.pdf Description: MOSFET N-CH 240V 360MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 2515 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.5 EUR
100+ 2.34 EUR
Mindestbestellmenge: 8
TN2524N8-G TN2524N8-G Hersteller : Microchip Technology TN2524_N_Channel_Enhancement_Mode_Vertical_DMOS_FE-1923603.pdf MOSFET 240V 6Ohm
auf Bestellung 2111 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.72 EUR
25+ 3.09 EUR
100+ 2.78 EUR
Mindestbestellmenge: 14
TN2524N8-G
Produktcode: 131242
TN2524-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005952A.pdf IC > IC andere
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