TN2540N3-G-P002 Microchip Technology
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| 1000+ | 2.01 EUR |
| 2000+ | 2 EUR |
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Technische Details TN2540N3-G-P002 Microchip Technology
Description: MOSFET N-CH 400V 175MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 175mA (Tj), Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V.
Weitere Produktangebote TN2540N3-G-P002
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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TN2540N3-G-P002 | Microchip Technology |
 Description: MOSFET N-CH 400V 175MA TO92-3Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
TN2540N3-G-P002 | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 175mA; Idm: 2A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 175mA Pulsed drain current: 2A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: THT Kind of package: tape Kind of channel: enhancement Manufacturer standard package: 2000pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
TN2540N3-G-P002 | Microchip Technology |
Trans MOSFET N-CH Si 400V 0.175A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
TN2540N3-G-P002 | Microchip Technology |
Trans MOSFET N-CH Si 400V 0.175A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TN2540N3-G-P002 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 400V 175MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Description: MOSFET N-CH 400V 175MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TN2540N3-G-P002 |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 175mA; Idm: 2A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 175mA
Pulsed drain current: 2A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: THT
Kind of package: tape
Kind of channel: enhancement
Manufacturer standard package: 2000pcs.
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 175mA; Idm: 2A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 175mA
Pulsed drain current: 2A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: THT
Kind of package: tape
Kind of channel: enhancement
Manufacturer standard package: 2000pcs.
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TN2540N3-G-P002 |
|
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 400V 0.175A 3-Pin TO-92 T/R
Trans MOSFET N-CH Si 400V 0.175A 3-Pin TO-92 T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TN2540N3-G-P002 |
|
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 400V 0.175A 3-Pin TO-92 T/R
Trans MOSFET N-CH Si 400V 0.175A 3-Pin TO-92 T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH