TN2640LG-G Microchip Technology
auf Bestellung 3250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 2.84 EUR |
| 500+ | 2.7 EUR |
| 1000+ | 2.55 EUR |
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Technische Details TN2640LG-G Microchip Technology
Description: MOSFET N-CH 400V 260MA 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 260mA (Tj), Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 2V @ 2mA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V.
Weitere Produktangebote TN2640LG-G nach Preis ab 2.78 EUR bis 12.99 EUR
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TN2640LG-G | Hersteller : Microchip Technology |
 MOSFETs 400V 5Ohm |
auf Bestellung 2846 Stücke: Lieferzeit 10-14 Tag (e) |
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TN2640LG-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 400V 260MA 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Tj) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2V @ 2mA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V |
auf Bestellung 2718 Stücke: Lieferzeit 10-14 Tag (e) |
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TN2640LG-G Produktcode: 144489
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TN2640LG-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 400V 260MA 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Tj) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2V @ 2mA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V |
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