
TN2640N3-G MICROCHIP TECHNOLOGY

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 220mA; Idm: 2A; 740mW; TO92
Kind of package: bulk
Case: TO92
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 400V
Pulsed drain current: 2A
Drain current: 0.22A
On-state resistance: 5Ω
Power dissipation: 0.74W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
33+ | 2.22 EUR |
34+ | 2.14 EUR |
37+ | 1.94 EUR |
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Technische Details TN2640N3-G MICROCHIP TECHNOLOGY
Description: MOSFET N-CH 400V 220MA TO92-3, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 220mA (Tj), Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, Power Dissipation (Max): 740mW (Ta), Vgs(th) (Max) @ Id: 2V @ 2mA, Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V.
Weitere Produktangebote TN2640N3-G nach Preis ab 1.94 EUR bis 3.06 EUR
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TN2640N3-G | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 220mA; Idm: 2A; 740mW; TO92 Kind of package: bulk Case: TO92 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Drain-source voltage: 400V Pulsed drain current: 2A Drain current: 0.22A On-state resistance: 5Ω Power dissipation: 0.74W Gate-source voltage: ±20V |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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TN2640N3-G | Hersteller : Microchip Technology |
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auf Bestellung 1183 Stücke: Lieferzeit 10-14 Tag (e) |
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TN2640N3-G | Hersteller : Microchip Technology |
![]() Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Tj) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 2V @ 2mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V |
auf Bestellung 167 Stücke: Lieferzeit 10-14 Tag (e) |
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TN2640N3-G | Hersteller : Microchip Technology |
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auf Bestellung 12375 Stücke: Lieferzeit 14-21 Tag (e) |
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TN2640N3-G | Hersteller : Microchip Technology |
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TN2640N3-G | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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TN2640N3-G | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |