TN5325N8-G Microchip Technology
auf Bestellung 630 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 180+ | 0.87 EUR |
| 181+ | 0.83 EUR |
| 202+ | 0.72 EUR |
| 212+ | 0.66 EUR |
| 250+ | 0.63 EUR |
| 500+ | 0.6 EUR |
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Technische Details TN5325N8-G Microchip Technology
Description: MOSFET N-CH 250V 316MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 316mA (Tj), Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-243AA (SOT-89), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V.
Weitere Produktangebote TN5325N8-G nach Preis ab 0.62 EUR bis 1.88 EUR
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TN5325N8-G | Hersteller : Microchip Technology |
 Trans MOSFET N-CH Si 250V 0.316A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 630 Stücke: Lieferzeit 14-21 Tag (e) |
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TN5325N8-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 250V 316MA TO243AA Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 316mA (Tj) Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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TN5325N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 250V 0.316A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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TN5325N8-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 250V 316MA TO243AA Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 316mA (Tj) Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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TN5325N8-G | Hersteller : Microchip Technology |
MOSFET 250V 7Ohm |
auf Bestellung 20783 Stücke: Lieferzeit 14-28 Tag (e) |
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TN5325N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 316mA; Idm: 1.5A; 1.6W Polarisation: unipolar Power dissipation: 1.6W Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1.5A Mounting: SMD Case: SOT89-3 Drain-source voltage: 250V Drain current: 316mA On-state resistance: 7Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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TN5325N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 250V 0.316A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
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TN5325N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 250V 0.316A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
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TN5325N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 316mA; Idm: 1.5A; 1.6W Polarisation: unipolar Power dissipation: 1.6W Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1.5A Mounting: SMD Case: SOT89-3 Drain-source voltage: 250V Drain current: 316mA On-state resistance: 7Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |