Technische Details TN6725A NSC
Description: TRANS NPN DARL 50V 1.2A TO226-3, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bulk, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 1.2 A, Supplier Device Package: TO-226-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN - Darlington.
Weitere Produktangebote TN6725A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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TN6725A | onsemi |
 Description: TRANS NPN DARL 50V 1.2A TO226-3Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 1.2 A Supplier Device Package: TO-226-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN - Darlington |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TN6725A |
|
Hersteller: onsemi
Description: TRANS NPN DARL 50V 1.2A TO226-3
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 1.2 A
Supplier Device Package: TO-226-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Description: TRANS NPN DARL 50V 1.2A TO226-3
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 1.2 A
Supplier Device Package: TO-226-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH