TP0606N3-G Microchip Technology
| Anzahl | Preis |
|---|---|
| 96+ | 1.52 EUR |
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Technische Details TP0606N3-G Microchip Technology
Description: MOSFET P-CH 60V 320MA TO92-3, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 320mA (Tj), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V.
Weitere Produktangebote TP0606N3-G nach Preis ab 1.39 EUR bis 1.9 EUR
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TP0606N3-G | Microchip Technology |
 Description: MOSFET P-CH 60V 320MA TO92-3Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Tj) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
auf Bestellung 1221 Stücke: Lieferzeit 10-14 Tag (e) |
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TP0606N3-G | Microchip Technology |
Trans MOSFET P-CH Si 60V 0.32A 3-Pin TO-92 Bag |
auf Bestellung 1550 Stücke: Lieferzeit 14-21 Tag (e) |
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Hersteller: Microchip Technology
Description: MOSFET P-CH 60V 320MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Description: MOSFET P-CH 60V 320MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 1221 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.87 EUR |
| 25+ | 1.53 EUR |
| 100+ | 1.39 EUR |
| TP0606N3-G |
|
Hersteller: Microchip Technology
Trans MOSFET P-CH Si 60V 0.32A 3-Pin TO-92 Bag
Trans MOSFET P-CH Si 60V 0.32A 3-Pin TO-92 Bag
auf Bestellung 1550 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 76+ | 1.9 EUR |
| 250+ | 1.57 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.43 EUR |