TP0620N3-G Microchip Technology

Description: MOSFET P-CH 200V 175MA TO92-3, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 175mA (Tj), Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V.