TP2502N8-G Microchip Technology
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 2.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TP2502N8-G Microchip Technology
Description: MOSFET P-CH 20V 630MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 630mA (Tj), Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-243AA (SOT-89), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 20 V.
Weitere Produktangebote TP2502N8-G nach Preis ab 2.62 EUR bis 4.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TP2502N8-G | Hersteller : Microchip Technology |
 Description: MOSFET P-CH 20V 630MA TO243AAPackaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Tj) Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 20 V |
auf Bestellung 1240 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
TP2502N8-G | Hersteller : Microchip Technology |
MOSFET 20V 2Ohm |
auf Bestellung 1071 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||
|
|
TP2502N8-G | Hersteller : Microchip Technology |
Trans MOSFET P-CH Si 20V 0.63A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
|||||||||
|
|
TP2502N8-G | Hersteller : Microchip Technology |
Trans MOSFET P-CH Si 20V 0.63A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
|||||||||
 |
TP2502N8-G | Hersteller : Microchip Technology |
Trans MOSFET P-CH Si 20V 3.3A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
|||||||||
 |
TP2502N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 1.6W; SOT89-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -2A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||
|
|
TP2502N8-G | Hersteller : Microchip Technology |
Description: MOSFET P-CH 20V 630MA TO243AA Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Tj) Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 20 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
TP2502N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 1.6W; SOT89-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -2A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |