TP5322K1-G Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET P-CH 220V 120MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 220 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
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Technische Details TP5322K1-G Microchip Technology
Description: MOSFET P-CH 220V 120MA TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 120mA (Tj), Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-236AB (SOT23), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 220 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V.
Weitere Produktangebote TP5322K1-G nach Preis ab 0.84 EUR bis 1.14 EUR
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TP5322K1-G | Microchip Technology |
Description: MOSFET P-CH 220V 120MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Tj) Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-236AB (SOT23) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 220 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V |
auf Bestellung 5275 Stücke: Lieferzeit 10-14 Tag (e) |
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TP5322K1-G | Microchip Technology |
MOSFETs 220V 12 Ohm 0.7A |
auf Bestellung 20137 Stücke: Lieferzeit 10-14 Tag (e) |
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| TP5322K1-G |
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Hersteller: Microchip Technology
Description: MOSFET P-CH 220V 120MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 220 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
Description: MOSFET P-CH 220V 120MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 220 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
auf Bestellung 5275 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.13 EUR |
| 25+ | 0.91 EUR |
| 100+ | 0.84 EUR |
| TP5322K1-G |
|
Hersteller: Microchip Technology
MOSFETs 220V 12 Ohm 0.7A
MOSFETs 220V 12 Ohm 0.7A
auf Bestellung 20137 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.14 EUR |
| 25+ | 0.92 EUR |
| 100+ | 0.85 EUR |