TP65H070LDG-TR Renesas Electronics Corporation

Description: 650 V 25 A GAN FET, Mounting Type: Surface Mount, Package / Case: 3-PowerDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 3-PQFN (8x8), Vgs(th) (Max) @ Id: 4.8V @ 700µA, Power Dissipation (Max): 96W (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ).