Technische Details TP65H070LDG-TR Transphorm
Description: 650 V 25 A GAN FET, Mounting Type: Surface Mount, Package / Case: 3-PowerDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 3-PQFN (8x8), Vgs(th) (Max) @ Id: 4.8V @ 700µA, Power Dissipation (Max): 96W (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ).
Weitere Produktangebote TP65H070LDG-TR nach Preis ab 12.96 EUR bis 24.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TP65H070LDG-TR | Transphorm |
 Description: 650 V 25 A GAN FETInput Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 3-PQFN (8x8) Vgs(th) (Max) @ Id: 4.8V @ 700µA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerDFN Packaging: Cut Tape (CT) |
auf Bestellung 662 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TP65H070LDG-TR |
|
Hersteller: Transphorm
Description: 650 V 25 A GAN FET
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 3-PQFN (8x8)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerDFN
Packaging: Cut Tape (CT)
Description: 650 V 25 A GAN FET
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 3-PQFN (8x8)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 662 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 24.22 EUR |
| 10+ | 17.02 EUR |
| 100+ | 12.96 EUR |