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TP65H150G4LSG-TR

TP65H150G4LSG-TR Renesas Electronics Corporation

datasheet-tp65h150g4lsg-650v-gan-fet
Hersteller: Renesas Electronics Corporation
Description: 650 V 13 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
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Technische Details TP65H150G4LSG-TR Renesas Electronics Corporation

Description: 650 V 13 A GAN FET, Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 3-PQFN (8x8), Vgs(th) (Max) @ Id: 4.8V @ 500µA, Power Dissipation (Max): 52W (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Package / Case: 3-PowerTDFN, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Part Status: Active.

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TP65H150G4LSG-TR TP65H150G4LSG-TR Renesas Electronics Corporation datasheet-tp65h150g4lsg-650v-gan-fet Description: 650 V 13 A GAN FET
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 3-PQFN (8x8)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 3-PowerTDFN
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TP65H150G4LSG-TR TP65H150G4LSG-TR Transphorm TP65H150G4LSG_3v1-2900669.pdf MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
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TP65H150G4LSG-TR datasheet-tp65h150g4lsg-650v-gan-fet
TP65H150G4LSG-TR
Hersteller: Renesas Electronics Corporation
Description: 650 V 13 A GAN FET
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 3-PQFN (8x8)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 3-PowerTDFN
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TP65H150G4LSG-TR TP65H150G4LSG_3v1-2900669.pdf
TP65H150G4LSG-TR
Hersteller: Transphorm
MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH