TP70H300G4JSGB-TR RENESAS

Description: RENESAS - TP70H300G4JSGB-TR - Galliumnitrid (GaN)-Transistor, 700 V, 8 A, 0.312 ohm, 5.4 nC, QFN, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 700V, rohsCompliant: YES, Dauer-Drainstrom Id: 8A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, usEccn: EAR99, euEccn: NLR, Gate-Ladung, typ.: 5.4nC, Bauform - Transistor: QFN, Anzahl der Pins: 8Pin(s), Produktpalette: SuperGaN Series, productTraceability: Yes-Date/Lot Code, Drain-Source-Durchgangswiderstand: 0.312ohm, SVHC: No SVHC (25-Jun-2025).