| Anzahl | Preis |
|---|---|
| 2+ | 1.5 EUR |
| 10+ | 1.07 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.59 EUR |
| 2500+ | 0.52 EUR |
| 5000+ | 0.47 EUR |
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Technische Details TP89R103NL,LQ Toshiba
Description: MOSFET N CH 30V 15A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 7.5A, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 100µA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V.
Weitere Produktangebote TP89R103NL,LQ nach Preis ab 0.6 EUR bis 2.02 EUR
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TP89R103NL,LQ | Toshiba Semiconductor and Storage |
 Description: MOSFET N CH 30V 15A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 7.5A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 100µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V |
auf Bestellung 1806 Stücke: Lieferzeit 10-14 Tag (e) |
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| TP89R103NL,LQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 15A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 7.5A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Description: MOSFET N CH 30V 15A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 7.5A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
auf Bestellung 1806 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.02 EUR |
| 14+ | 1.28 EUR |
| 100+ | 0.84 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.6 EUR |