TPAU3J S1G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE AVALANCHE 600V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.88 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.79 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
1500 Stücke
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Produktbewertung abgeben
Technische Details TPAU3J S1G Taiwan Semiconductor Corporation
Description: DIODE AVALANCHE 600V 3A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Avalanche, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.88 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Weitere Produktangebote TPAU3J S1G nach Preis ab 1.06 EUR bis 3.14 EUR
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TPAU3J S1G | Taiwan Semiconductor Corporation |
Description: DIODE AVALANCHE 600V 3A TO277A Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Avalanche Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.88 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 8842 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TPAU3J S1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE AVALANCHE 600V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.88 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE AVALANCHE 600V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.88 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 8842 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.14 EUR |
| 11+ | 2 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.06 EUR |