TPC8129,LQ(S Toshiba Semiconductor and Storage

Description: MOSFET P-CH 30V 9A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +20V, -25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2V @ 200µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).