TPC8212-H(TE12LQ,M Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 6A 8SOP
Supplier Device Package: 8-SOP (5.5x6.0)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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Technische Details TPC8212-H(TE12LQ,M Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 6A 8SOP, Supplier Device Package: 8-SOP (5.5x6.0), Vgs(th) (Max) @ Id: 2.3V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, Rds On (Max) @ Id, Vgs: 21mOhm @ 3A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 6A, Drain to Source Voltage (Vdss): 30V, Power - Max: 450mW, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.173", 4.40mm Width), Packaging: Tape & Reel (TR).
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