TPC8228-H,LQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET 2N-CH 60V 3.8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Rds On (Max) @ Id, Vgs: 57mOhm @ 1.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
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Technische Details TPC8228-H,LQ Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 3.8A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.8A, Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V, Rds On (Max) @ Id, Vgs: 57mOhm @ 1.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 100µA, Supplier Device Package: 8-SOP.
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TPC8228-H,LQ | Hersteller : Toshiba |
MOSFET Pb-F POWER MOSFET TRANSISTOR SOP8 MOQ=2500 PD=1.5W F=1MHZ |
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