TPC8407,LQ(S Toshiba

Description: MOSFET N/P-CH 30V 9A/7.4A 8SOP, Part Status: Obsolete, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.3V @ 100µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 9A, 7.4A, Drain to Source Voltage (Vdss): 30V, Power - Max: 450mW, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).