auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TPC8408,LQ(S Toshiba
Description: MOSFET N/P-CH 40V 6.1A/5.3A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 450mW, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A, Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, Rds On (Max) @ Id, Vgs: 32mOhm @ 3.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.3V @ 100µA, Supplier Device Package: 8-SOP, Part Status: Active.
Weitere Produktangebote TPC8408,LQ(S nach Preis ab 0.23 EUR bis 1.55 EUR
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TPC8408,LQ(S | Hersteller : Toshiba |
 Trans MOSFET N/P-CH Si 40V 6.1A/5.3A 8-Pin SOP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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TPC8408,LQ(S | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 40V 6.1A/5.3A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Rds On (Max) @ Id, Vgs: 32mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 100µA Supplier Device Package: 8-SOP Part Status: Active |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TPC8408,LQ(S | Hersteller : Toshiba |
Trans MOSFET N/P-CH Si 40V 6.1A/5.3A 8-Pin SOP T/R |
auf Bestellung 7458 Stücke: Lieferzeit 14-21 Tag (e) |
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TPC8408,LQ(S | Hersteller : Toshiba |
Trans MOSFET N/P-CH Si 40V 6.1A/5.3A 8-Pin SOP T/R |
auf Bestellung 7458 Stücke: Lieferzeit 14-21 Tag (e) |
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TPC8408,LQ(S | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 40V 6.1A/5.3A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Rds On (Max) @ Id, Vgs: 32mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 100µA Supplier Device Package: 8-SOP Part Status: Active |
auf Bestellung 3561 Stücke: Lieferzeit 10-14 Tag (e) |
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TPC8408,LQ(S | Hersteller : Toshiba |
MOSFET N and P Ch 40V FET 6.1A 1.5W 850pF |
auf Bestellung 4973 Stücke: Lieferzeit 112-126 Tag (e) |
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TPC8408,LQ(S | Hersteller : Toshiba |
Trans MOSFET N/P-CH Si 40V 6.1A/5.3A 8-Pin SOP T/R |
Produkt ist nicht verfügbar |