| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.12 EUR |
| 10+ | 0.79 EUR |
| 100+ | 0.61 EUR |
| 250+ | 0.6 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.43 EUR |
| 2500+ | 0.38 EUR |
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Technische Details TPC8408,LQ(S Toshiba
Description: MOSFET N/P-CH 40V 6.1A/5.3A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 450mW, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A, Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, Rds On (Max) @ Id, Vgs: 32mOhm @ 3.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.3V @ 100µA, Supplier Device Package: 8-SOP, Part Status: Active.
Weitere Produktangebote TPC8408,LQ(S
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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TPC8408,LQ(S | Toshiba Semiconductor and Storage |
 Description: MOSFET N/P-CH 40V 6.1A/5.3A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Rds On (Max) @ Id, Vgs: 32mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 100µA Supplier Device Package: 8-SOP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
TPC8408,LQ(S | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 40V 6.1A/5.3A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Rds On (Max) @ Id, Vgs: 32mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 100µA Supplier Device Package: 8-SOP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TPC8408,LQ(S |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 40V 6.1A/5.3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET N/P-CH 40V 6.1A/5.3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPC8408,LQ(S |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 40V 6.1A/5.3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET N/P-CH 40V 6.1A/5.3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH