Technische Details TPCA8036-H(TE12L,Q) TOSHIBA
Description: MOSFET N-CH 30V 38A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Power Dissipation (Max): 1.6W (Ta), 45W (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 19A, 10V, Current - Continuous Drain (Id) @ 25°C: 38A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 2.3V @ 500µA.
Weitere Produktangebote TPCA8036-H(TE12L,Q)
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| TPCA8036-H(TE12L,Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 38A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.3V @ 500µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TPCA8036-H(TE12L,Q |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 38A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Description: MOSFET N-CH 30V 38A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

