| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.34 EUR |
| 10+ | 2.12 EUR |
| 100+ | 1.64 EUR |
| 500+ | 1.36 EUR |
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Technische Details TPCA8047-H(T2L1,VM Toshiba
Description: MOSFET N-CH 40V 32A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V, Power Dissipation (Max): 1.6W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V.
Weitere Produktangebote TPCA8047-H(T2L1,VM
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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TPCA8047-H(T2L1,VM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 32A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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TPCA8047-H(T2L1,VM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 32A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TPCA8047-H(T2L1,VM |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 32A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V
Description: MOSFET N-CH 40V 32A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPCA8047-H(T2L1,VM |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 32A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V
Description: MOSFET N-CH 40V 32A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH