| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.08 EUR |
| 10+ | 1.73 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 0.88 EUR |
| 2500+ | 0.87 EUR |
| 5000+ | 0.83 EUR |
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Technische Details TPCA8052-H(T2L1,VM Toshiba
Description: MOSFET N-CH 40V 20A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 2.3V @ 200µA, Power Dissipation (Max): 1.6W (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TPCA8052-H(T2L1,VM
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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TPCA8052-H(T2L1,VM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 20A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.3V @ 200µA Power Dissipation (Max): 1.6W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
TPCA8052-H(T2L1,VM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 20A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.3V @ 200µA Power Dissipation (Max): 1.6W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TPCA8052-H(T2L1,VM |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 20A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPCA8052-H(T2L1,VM |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 20A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH