auf Bestellung 5687 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 137+ | 1.10 EUR |
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Technische Details TPCA8057-H,LQ(M Toshiba
Description: MOSFET N-CH 30V 42A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Ta), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V, Power Dissipation (Max): 1.6W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 10 V.
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TPCA8057-H,LQ(M | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 30V 42A 8-Pin SOP Advance T/R |
auf Bestellung 5687 Stücke: Lieferzeit 14-21 Tag (e) |
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TPCA8057-H,LQ(M | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 42A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V Power Dissipation (Max): 1.6W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 10 V |
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