TPCA8128,L1Q Toshiba Semiconductor and Storage

Description: MOSFET P-CH 30V 34A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +20V, -25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 2V @ 500µA, Power Dissipation (Max): 1.6W (Ta), 45W (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V, Current - Continuous Drain (Id) @ 25°C: 34A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).